BUK9Y19-55B N-channel TrenchMOS logic level FET

NXP Semiconductors

Description

www.DataSheet4U.com BUK9Y19-55B N-channel TrenchMOS™ logic level FET M3D748 Rev.01 * 28 May 2004 Product data 1.Product proﬁle 1.1 Descr.
N-channel enhancement mode ﬁeld-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.

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Datasheet Specifications

Part number: BUK9Y19-55B
Manufacturer: NXP ↗ Semiconductors
File Size: 129.46 KB
Datasheet: BUK9Y19-55B_NXPSemiconductors.pdf
Description: N-channel TrenchMOS logic level FET

Applications

* s Automotive systems s Motors, lamps and solenoids s 12 V and 24 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 91 mJ s ID ≤ 40 A s RDSon = 16.3 mΩ (typ) s Ptot ≤ 75 W. 2. Pinning information Table 1: Pin 1,2,3 4 mb Pinning - SOT669 (LFPAK) simpliﬁed outline and s

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BUK9Y19-55B N-channel TrenchMOS logic level FET NXP Semiconductors

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