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PDTB114ET Datasheet - NXP Semiconductors

PNP resistor-equipped transistor

PDTB114ET Features

* Built-in bias resistors R1 and R2 (typ. 10 kΩ each)

* Simplification of circuit design

* Reduces number of components and board space. APPLICATIONS

* Especially suitable for space reduction in interface and driver circuits

* Inverter circuit configurations w

PDTB114ET General Description

PNP resistor-equipped transistor in a SOT23 plastic package. NPN complement: PDTD114ET. 1 3 2 MARKING TYPE NUMBER PDTB114ET MARKING CODE p09 PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground (+) collector/output MGA893 - 1 Fig.2 Equivalent inverter symbol. QUICK REFERENCE DATA SYMBOL VCEO.

PDTB114ET Datasheet (2.07 MB)

Preview of PDTB114ET PDF

Datasheet Details

Part number:

PDTB114ET

Manufacturer:

NXP ↗ Semiconductors

File Size:

2.07 MB

Description:

Pnp resistor-equipped transistor.
DISCRETE SEMICONDUCTORS www.DataSheet4U.com DATA SHEET ook, halfpage M3D088 PDTB114ET PNP resistor-equipped transistor Objective specification Supe.

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Stock and price

Distributor
Vishay Intertechnologies
SUP85N10-10-GE3
327 In Stock
Qty : 1000 units
Unit Price : $4.09

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PDTB114ET PNP resistor-equipped transistor NXP Semiconductors

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