PDTB113ET 50V resistor-equipped transistor

NXP

Description

PDTB113ET PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ Rev.3 * 14 September 2010 Product data sheet 1.Product pro.
500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

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Datasheet Specifications

Part number: PDTB113ET
Manufacturer: NXP ↗
File Size: 102.16 KB
Datasheet: PDTB113ET-NXP.pdf
Description: 50V resistor-equipped transistor

Features

* 500 mA output current capability
* Built-in bias resistors
* Simplifies circuit design
* Reduces component count
* Reduces pick and place costs
* ±10 % resistor ratio tolerance

Applications

* Digital application in automotive and industrial segments
* Control of IC inputs
* Cost-saving alternative for BC807 series in digital applications
* Switching loads 1.4 Quick reference data Table 1. Symbol VCEO IO R1 R2/R1 Quick reference data Parameter collect

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PDTB113ET 50V resistor-equipped transistor NXP

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