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PDTB123ET 50V resistor-equipped transistor

PDTB123ET Description

PDTB123ET PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev.3 * 22 September 2010 Product data sheet 1.Product.
500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

PDTB123ET Features

* 500 mA output current capability
* Built-in bias resistors
* Simplifies circuit design
* Reduces component count
* Reduces pick and place costs
* ±10 % resistor ratio tolerance

PDTB123ET Applications

* Digital application in automotive and industrial segments
* Control of IC inputs
* Cost-saving alternative for BC807 series in digital applications
* Switching loads 1.4 Quick reference data Table 1. Symbol VCEO IO R1 R2/R1 Quick reference data Parameter collect

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Datasheet Details

Part number
PDTB123ET
Manufacturer
NXP ↗
File Size
102.08 KB
Datasheet
PDTB123ET-NXP.pdf
Description
50V resistor-equipped transistor

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50V resistor-equipped transistor NXP
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