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PDTB123TT 50V resistor-equipped transistor

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Description

PDTB123TT PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open Rev.4 * 8 November 2010 Product data sheet 1.Product pro.
500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

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Datasheet Specifications

Part number
PDTB123TT
Manufacturer
NXP ↗
File Size
94.11 KB
Datasheet
PDTB123TT-NXP.pdf
Description
50V resistor-equipped transistor

Features

* 500 mA output current capability
* Built-in bias resistor
* Simplifies circuit design
* Reduces component count
* Reduces pick and place costs

Applications

* Digital application in automotive and industrial segments
* Control of IC inputs
* Cost-saving alternative for BC807 series in digital applications
* Switching loads 1.4 Quick reference data Table 1. Symbol VCEO IO R1 Quick reference data Parameter collector-emi

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