PMN50UPE MOSFET

NXP Semiconductors

Description

PMN50UPE 20 July 2012 20 V, single P-channel Trench MOSFET Product data sheet 1.Product profile 1.1 General .
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET te.

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Datasheet Specifications

Part number: PMN50UPE
Manufacturer: NXP ↗ Semiconductors
File Size: 227.02 KB
Datasheet: PMN50UPE-NXPSemiconductors.pdf
Description: MOSFET

Features

* 3 kV ESD protected
* Trench MOSFET technology

Applications

* Relay driver
* High-side loadswitch
* Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = -4.5 V; ID = -3.6 A; Tj = 25 °C

PMN50UPE Distributors

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PMN50UPE MOSFET NXP Semiconductors

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