PMWD18UN Dual N-channel uTrenchMOS ultra low level FET

NXP Semiconductors

Description

www.DataSheet4U.com PMWD18UN M3D647 Dual N-channel µTrenchMOS™ ultra low level FET Rev.02 * 23 February 2004 Product data 1.Product proﬁl.
Dual common drain N-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™ technology.

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Datasheet Specifications

Part number: PMWD18UN
Manufacturer: NXP ↗ Semiconductors
File Size: 118.90 KB
Datasheet: PMWD18UN_NXPSemiconductors.pdf
Description: Dual N-channel uTrenchMOS ultra low level FET

PMWD18UN Distributors

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PMWD18UN Dual N-channel uTrenchMOS ultra low level FET NXP Semiconductors

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