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PMWD22XN
Rev. 01 — 15 August 2005
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Dual N-channel µTrenchMOS extremely low level FET
Product data sheet
1. Product profile
1.1 General description
Dual common drain N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
1.2 Features
s Low threshold voltage s Fast switching s Common drain
1.3 Applications
s Portable appliances s Battery management
1.4 Quick reference data
s VDS ≤ 20 V s RDSon ≤ 26 mΩ s ID ≤ 9.2 A s QGD = 2.7 nC (typ)
2. Pinning information
Table 1: Pin 1, 8 2, 3 4 5 6, 7 Pinning Description drain (D) source1 (S1) gate1 (G1) gate2 (G2) source2 (S2)
G1 S1 G2 S2
mbl600
Simplified outline
8 5
Symbol
D D
1
4
SOT530-1 (TSSOP8)
Philips Semiconductors
PMWD22XN
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PMWD22XN Datasheet
