* s Low threshold voltage s Fast switching s Common drain 1.3 Applications s Portable appliances s Battery management 1.4 Quick reference data s VDS ≤ 20 V s RDSon ≤ 26 mΩ s ID ≤ 9.2 A s QGD = 2.7 nC (typ) 2. Pinning information Table 1: Pin 1, 8 2, 3 4 5 6, 7 Pinning Description drain (D) source1
PMWD22XN Datasheet (110.52 KB)
PMWD22XN
NXP ↗ Semiconductors
110.52 KB
Dual n-channel utrenchmos extremely low level fet.
PMWD22XN
Rev. 01
* 15 August 2005
www.DataSheet4U.com
Dual N-channel µTrenchMOS extremely low level FET
Product data sheet
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