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PSMN102-200Y N-channel TrenchMOS SiliconMAX standard level FET

PSMN102-200Y Description

LF PA K PSMN102-200Y N-channel TrenchMOS SiliconMAX standard level FET Rev.03 * 16 March 2011 Product data sheet 1.Product profile 1.1 Gen.
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

PSMN102-200Y Features

* Higher operating power due to low thermal resistance

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