* High reliability Power SO8 package, qualified to 175°C
* Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
* Ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads
* Ultra low Rdson and low parasitic inductance 1.3 Applications
PSMN1R0-30YLC Datasheet (396.50 KB)
PSMN1R0-30YLC
NXP ↗ Semiconductors
396.50 KB
N-channel mosfet.
www.DataSheet.co.kr LF PA K PSMN1R0-30YLC N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 4 4 July 2011.
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