PSMN1R0-40ULD - N-channel MOSFET

nexperia

PSMN1R0-40ULD Datasheet Preview — Preview of PSMN1R0-40ULD PDF

Datasheet Details

Part number	PSMN1R0-40ULD
Manufacturer	nexperia ↗
File Size	264.89 KB
Description	N-channel MOSFET
Datasheet	PSMN1R0-40ULD-nexperia.pdf

PSMN1R0-40ULD Product details

Description

SOT1023A with improved creepage and clearance to meet UL2595 requirements 280 Amp, logic level gate drive N-channel enhancement mode MOSFET in 150 °C LFPAK56 package using advanced TrenchMOS Superjunction technology.

Features

Improved creepage and clearance.
meets the requirements of UL2595.
280 A capability.
Avalanche rated, 100% tested at IAS = 190 A.
NextPower-S3 technology delivers 'superfast switching with soft recovery'.
Low QRR, QG and QGD for high system efficiency and low EMI designs.
Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage.
Optimised for 4.5 V gate drive utilising NextPower-S3 Superjuncti.

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Published: Jul 28, 2019 |