PSMN1R0-40ULD Datasheet - nexperia

PSMN1R0-40ULD N-channel MOSFET

SOT1023A with improved creepage and clearance to meet UL2595 requirements 280 Amp, logic level gate drive N-channel enhancement mode MOSFET in 150 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching a.

PSMN1R0-40ULD Features

* Improved creepage and clearance

* meets the requirements of UL2595

* 280 A capability

* Avalanche rated, 100% tested at IAS = 190 A

* NextPower-S3 technology delivers 'superfast switching with soft recovery'

* Low QRR, QG and QGD for high system effi

PSMN1R0-40ULD-nexperia.pdf