PSMN1R2-25YL Datasheet | NXP Semiconductors

.. N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK Rev. 01 - 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment. 1.2 Features and benefits - Advanced Trench MOS provides low RDSon and low gate charge - High efficiency gains in switching power converters - Improved mechanical and thermal characteristics - LFPAK provides maximum power density in a Power SO8 package 1.3 Applications - DC-to-DC converters - Lithium-ion battery protection - Load switching - Motor control - Server power supplies 1.4 Quick reference data Table 1. VDS ID Ptot Tj Quick reference Conditions Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 [1] Min -55 VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 25 V; RGS = 50 Ω; unclamped VGS = 4.5 V; ID = 25 A; VDS = 12 V; see Figure 12; see Figure 13 Typ Max 25 100 121 150 677 Unit V A W °C m J drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C drain current total power dissipation junction temperature Symbol Parameter Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge 11.9 50.6 n C n C NXP Semiconductors .. N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK Quick reference …continued Conditions VGS = 10 V; ID = 15 A; Tj = 100 °C; see Figure 11 VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 10 Min Typ 0.9 Max 1.6 1.2 Unit mΩ mΩ Table 1. Symbol Parameter Static characteristics RDSon drain-source on-state resistance [1] Continuous current is limited by package. 2. Pinning...