PSMN1R2-25YLD Datasheet | Nexperia

N-channel 25 V, 1.2 mΩ, 230 A logic level MOSFET in LFPAK56 using Next Power S3 Technology 19 April 2016 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. Next Power S3 portfolio utilising Nexperia’s unique “Schottky Plus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. Next Power S3 is particularly suited to high efficiency applications at high switching frequencies. 2. Features and benefits - 100% Avalanche tested at I(AS) = 100 A - Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies - Superfast switching with soft-recovery - Low spiking and ringing for low EMI designs - Unique “Schottky Plus” technology; Schottky-like performance with < 1 µA leakage at 25 °C - Optimised for 4.5 V gate drive - Low parasitic inductance and resistance - High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175 °C - Wave solderable; exposed leads for optimal visual solder inspection 3. Applications - On-board DC:DC solutions for server and telemunications - Secondary-side synchronous rectification in telemunication applications - Voltage regulator modules (VRM) - Point-of-Load (POL) modules - Power delivery for V-core, ASIC, DDR, GPU, VGA and system ponents - Brushed and brushless motor control - Power OR-ing 4. Quick reference data Table 1. Symbol VDS ID Quick reference data Parameter drain-source voltage drain current Conditions 25 °C ≤ Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 2 Min Typ Max...