PSMN1R2-25YLC Datasheet | NXP Semiconductors

LF PA K N-channel 25 V 1.3 mΩ logic level MOSFET in LFPAK using Next Power technology Rev. 1 - 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment. 1.2 Features and benefits - High reliability Power SO8 package, qualified to 175°C - Optimised for 4.5V Gate drive utilising Next Power Superjunction technology - Ultra low QG, QGD and QOSS for high system efficiencies at low and high loads - Ultra low Rdson and low parasitic inductance 1.3 Applications - DC-to-DC converters - Lithium-ion battery protection - Load switching - Power OR-ing - Server power supplies - Sync rectifier 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 4.5 V; ID = 25 A; Tj = 25 °C; see Figure 12 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12 Conditions 25 °C ≤ Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 [1] Min -55 - Typ 1.35 Max 25 100 179 175 1.7 Unit V A W °C mΩ Static characteristics - 1.05 1.3 mΩ NXP...