PSMN1R0-100CSF Datasheet | Nexperia

description Next Power 100 V, standard level gate drive MOSFET. Qualified to 175 °C and remended for high power industrial and consumer applications. 2. Features and benefits - Low Qrr for higher efficiency and lower spiking - 460 Amps ID(max) continuous current rating - Low QG × RDSon FOM for high efficiency switching applications - Strong avalanche energy rating (Eas) - Avalanche rated and 100% tested - Ha-free and Ro HS pliant CCPAK1212i package - Inverted package, suitable for top-side cooling 3. Applications - Battery protection - High power full and half-bridge configurations - BLDC motor control - OR-ing 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge Conditions 25 °C ≤ Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 2 Tmb = 25 °C; Fig. 1 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 11 ID = 25 A; VDS = 50 V; VGS = 10 V; Tj = 25 °C; Fig. 13; Fig. 14 Min Typ Max Unit - - 100 V - - 460 A - - 1.55 k W - 0.83 1.04 mΩ 69.5 160 n...