PSMN1R0-25YLD Datasheet PDF - nexperia N-channel MOSFET Specs

PSMN1R0-25YLD - N-channel MOSFET

Datasheet Summary

Description

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.

Features

100% Avalanche tested at I(AS) = 100 A.
Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies.
Superfast switching with soft-recovery.
Low spiking and ringing for low EMI designs.
Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C.
Optimised for 4.5 V gate drive.
Low parasitic inductance and resistance.
High reliability clip bonded and solder.

Datasheet Details

Part number	PSMN1R0-25YLD
Manufacturer	nexperia
File Size	723.90 KB
Description	N-channel MOSFET
Datasheet	PSMN1R0-25YLD Datasheet
Additional preview pages of the PSMN1R0-25YLD datasheet.

📁 Similar Datasheet

PSMN1R0-30YLC - N-channel MOSFET (NXP Semiconductors)

PSMN1R0-30YLD - N-channel MOSFET (NXP)

PSMN1R0-40YLD - N-channel MOSFET (NXP)

PSMN1R1-25YLC - N-Channel MOSFET (NXP Semiconductors)

PSMN1R1-30EL - MOSFET (NXP Semiconductors)

PSMN1R1-30PL - MOSFET (NXP)

PSMN1R1-40BS - MOSFET (NXP)

PSMN1R2-25YL - N-channel 25 V 1.2 MOhm Logic Level MOSFET (NXP)

PSMN1R2-25YLC - N-channel 25V 1.3m ohm logic level MOSFET (NXP)

PSMN1R2-30YLC - MOSFET (NXP Semiconductors)

Full PDF Text Transcription

Click to expand full text

PSMN1R0-25YLD N-channel 25 V, 1.0 mΩ, 240 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology 19 April 2016 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. 2.

Published: Jul 5, 2019 |