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PSMN1R1-30PL - MOSFET

Datasheet Summary

Description

Logic level N-channel MOSFET in TO-220 package qualified to 175 °C.

This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

2.

Features

  • High efficiency due to low switching and conduction losses Suitable for logic level gate drive sources 3.

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Datasheet Details

Part number PSMN1R1-30PL
Manufacturer NXP
File Size 266.47 KB
Description MOSFET
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PSMN1R1-30PL 2 April 2014 TO -2 20A B N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 Product data sheet 1. General description Logic level N-channel MOSFET in TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • • High efficiency due to low switching and conduction losses Suitable for logic level gate drive sources 3. Applications • • • • DC-to-DC converters Load switiching Motor control Server power supplies 4. Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; Fig.
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