PSMN1R1-30PL Datasheet | NXP Semiconductors

2 April 2014 TO -2 20A N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 Product data sheet 1. General description Logic level N-channel MOSFET in TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment. 2. Features and benefits - - High efficiency due to low switching and conduction losses Suitable for logic level gate drive sources 3. Applications - - - - DC-to-DC converters Load switiching Motor control Server power supplies 4. Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; Fig. 2 Tmb = 25 °C; Fig. 1 [1] Min -55 Typ - Max 30 120 338 175 Unit V A W °C Static characteristics drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 12 VGS = 10 V; ID = 25 A; Tj = 100 °C; Fig. 13 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 4.5 V; ID = 75 A; VDS = 15 V; Fig. 14; Fig. 15 37 118 n C n C 1.5 1.8 mΩ [2] - 1.1 1.3 mΩ Scan or click this QR code to view the latest information for this product NXP Semiconductors N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 Symbol EDS(AL)S Parameter non-repetitive drainsource avalanche...