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PSMN1R1-30YLE - N-channel MOSFET

General Description

N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56 package optimized for low RDSon and strong safe operating area, optimized for hot-swap, inrush and linearmode applications.

2.

Key Features

  • Fully optimized Safe Operating Area (SOA) for superior linear mode operation.
  • Optimized for low RDSon / low I2R conduction losses.
  • LFPAK56 package for.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PSMN1R1-30YLE N-channel 30 V, 1.3 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 10 November 2022 Product data sheet 1. General description N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56 package optimized for low RDSon and strong safe operating area, optimized for hot-swap, inrush and linearmode applications. 2. Features and benefits • Fully optimized Safe Operating Area (SOA) for superior linear mode operation • Optimized for low RDSon / low I2R conduction losses • LFPAK56 package for applications that demand the highest performance and reliability in a 30 mm2 footprint • Low leakage <1 µA at 25 °C • Copper-clip for low parasitic inductance and resistance • High reliability LFPAK package, qualified to 175 °C 3.