PSMN1R1-30PL Datasheet | Nexperia

N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 2 April 2014 Product data sheet 1. General description Logic level N-channel MOSFET in TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment. 2. Features and benefits - High efficiency due to low switching and conduction losses - Suitable for logic level gate drive sources 3. Applications - DC-to-DC converters - Load switiching - Motor control - Server power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current Tmb = 25 °C; VGS = 10 V; Fig. 2 Ptot total power dissipation Tmb = 25 °C; Fig. 1 Tj junction temperature Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C; resistance Fig. 12 VGS = 10 V; ID = 25 A; Tj = 100 °C; Fig. 13 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 4.5 V; ID = 75 A; VDS = 15 V; Fig. 14; Fig....