PSMN1R0-40YLD - N-channel MOSFET

NXP

Datasheet Details

Logic level gate drive N-channel enhancement mode MOSFET in 150 °C LFPAK56 package using advanced TrenchMOS Superjunction technology.

NextPower-S3 technology delivers 'superfast switching with soft recovery'.
Low QRR, QG and QGD for high system efficiency and low EMI designs.
Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage.
Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology.
High reliability LFPAK (Power SO8) package, copper-clip, solder die attach and qualified to 150 °C.
Exposed leads can be wave soldere.

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Published: Feb 24, 2016 |