* NextPower-S3 technology delivers 'superfast switching with soft recovery'
* Low QRR, QG and QGD for high system efficiency and low EMI designs
* Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage
* Optimised for 4.5 V gate drive
PSMN1R0-40YLD Datasheet (287.32 KB)
PSMN1R0-40YLD
287.32 KB
N-channel mosfet.
LFPAK56 PSMN1R0-40YLD N-channel 40 V 1.1 mΩ logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 25 August 2014 Product data.
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