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PSMN1R0-40YSH N-channel MOSFET

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Description

PSMN1R0-40YSH N-channel 40 V, 1 mΩ, 290 A standard level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology 25 April 2019 Product data.
290 Amp, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56E package using advanced TrenchMOS Superjunction technology.

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Features

* 290 A continuous ID(max)
* Avalanche rated, 100% tested
* NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'
* Low QRR, QG and QGD for high system efficiency and low EMI designs
* Schottky-Plus body-diode, gives soft switchi

PSMN1R0-40YSH Distributors

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PSMN1R0-40YSH N-channel MOSFET nexperia
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