PSMN1R0-40YSH - N-channel MOSFET

nexperia

Datasheet Details

290 Amp, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56E package using advanced TrenchMOS Superjunction technology.

290 A continuous ID(max).
Avalanche rated, 100% tested.
NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'.
Low QRR, QG and QGD for high system efficiency and low EMI designs.
Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage.
Strong linear-mode / SOA rating.
High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 °C.

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Published: Jul 28, 2019 |