* High reliability Power SO8 package, qualified to 175°C
* Low parasitic inductance and resistance
* Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
* Ultra low QG, QGD, QOSS for high system efficiencies at low and high loads 1.3 Applications
* DC-to-D
PSMN4R5-30YLC Datasheet (227.88 KB)
PSMN4R5-30YLC
NXP ↗ Semiconductors
227.88 KB
Mosfet.
LF PA K
PSMN4R5-30YLC
N-channel 30 V 4.8 mΩ logic level MOSFET in LFPAK using NextPower technology
Rev. 3
* 5 July 2011 Product data sheet
1.
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