34GD3000 Three phase field effect transistor pre-driver

NXP

Description

NXP Semiconductors Data sheet: Advance Information Document Number: MC34GD3000 Rev.3.0, 5/2016 Three phase field effect transistor pre-driver The 3.

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Datasheet Specifications

Part number: 34GD3000
Manufacturer: NXP ↗
File Size: 577.85 KB
Datasheet: 34GD3000-NXP.pdf
Description: Three phase field effect transistor pre-driver

Features

* Extended supply voltage operating range: 6.0 V to 60 V
* Wide dead time range (50 ns to 12 μs) programmable via the SPI port
* Gate drive capability of 1.0 A to 2.5 A
* Charge pump ensures sufficient exter

Applications

* The integrated circuit (IC) uses SMARTMOS technology. The IC contains three high-side FET pre-drivers and three low-side FET predrivers. Three external bootstrap capacitors provide gate charge to the highside FETs. The IC interfaces to a MCU via six direct input control signals, an SPI port for dev

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34GD3000 Three phase field effect transistor pre-driver NXP

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