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AFIC10275GN, AFIC10275N RF LDMOS Wideband Integrated Power Amplifiers

AFIC10275GN Description

Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The avionics AFIC10275N is a 2 *stage RFIC designed for .

AFIC10275GN Features

* Characterized from 978 to 1090 MHz
* On
* Chip Input (50 Ohm) and Interstage Matching
* Single Ended
* Integrated ESD Protection
* Low Thermal Resistance

AFIC10275GN Applications

* operating from 978 to 1090 MHz. These devices are suitable for use in pulse applications, including Mode S transponders used for ADS
* B. Narrowband Performance: (50 Vdc, TA = 25C) Frequency (MHz) Signal Type Pout (W) 1090 (1) Pulse 250 Peak (128 sec, 10% Duty Cycle) Gps (dB) 32.1

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: AFIC10275GN, AFIC10275N. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
AFIC10275GN, AFIC10275N
Manufacturer
NXP ↗
File Size
0.99 MB
Datasheet
AFIC10275N-NXP.pdf
Description
RF LDMOS Wideband Integrated Power Amplifiers
Note
This datasheet PDF includes multiple part numbers: AFIC10275GN, AFIC10275N.
Please refer to the document for exact specifications by model.

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