AFIC10275N RF LDMOS Wideband Integrated Power Amplifiers

NXP

Description

Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The avionics AFIC10275N is a 2 *stage RFIC designed for .

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Datasheet Specifications

Part number: AFIC10275N
Manufacturer: NXP ↗
File Size: 0.99 MB
Datasheet: AFIC10275N-NXP.pdf
Description: RF LDMOS Wideband Integrated Power Amplifiers

Features

* Characterized from 978 to 1090 MHz
* On
* Chip Input (50 Ohm) and Interstage Matching
* Single Ended
* Integrated ESD Protection
* Low Thermal Resistance

Applications

* operating from 978 to 1090 MHz. These devices are suitable for use in pulse applications, including Mode S transponders used for ADS
* B. Narrowband Performance: (50 Vdc, TA = 25C) Frequency (MHz) Signal Type Pout (W) 1090 (1) Pulse 250 Peak (128 sec, 10% Duty Cycle) Gps (dB) 32.1

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AFIC10275N LDMOS Wideband Integrated Power Amplifiers NXP

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