BAV199 Low-leakage double diode

NXP

Description

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAV199 Low-leakage double diode Product data sheet Supersedes data of 1999 May 11 2001 Oct .
1 anode 2 cathode 3 anode; cathode APPLICATION. Low-leakage current applications in surface mounted circuits.

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Datasheet Specifications

Part number: BAV199
Manufacturer: NXP ↗
File Size: 71.51 KB
Datasheet: BAV199_PhilipsSemiconductors.pdf
Description: Low-leakage double diode

Features

* Plastic SMD package
* Low leakage current: typ. 3 pA
* Switching time: typ. 0.8 µs
* Continuous reverse voltage: max. 75 V
* Repetitive peak reverse voltage: max. 85 V
* Repetitive peak forward current: max. 500 mA. MARKING TYPE NUMBER BAV199 MARK

BAV199 Distributors

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BAV199 Low-leakage double diode NXP

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