BF245

N-channel silicon field-effect transistors

NXP

BF245 Features

* Interchangeability of drain and source connections

* Frequencies up to 700 MHz. APPLICATIONS

* LF, HF and DC amplifiers. PINNING PIN 1 2 3 SYMBOL DESCRIPTION d drain s source g gate DESCRIPTION General purpose N-channel symmetrical junction field-effect transistors in a plast

BF245 General Description

d drain s source g gate DESCRIPTION General purpose N-channel symmetrical junction field-effect transistors in a plastic TO-92 variant package. 1 handbook, halfpage2 3 d g s CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static disc.

BF245 Datasheet (97.68 KB)