BST120 P-channel transistor

NXP

Description

DISCRETE SEMICONDUCTORS DATA SHEET BST120 P-channel enhancement mode vertical D-MOS transistor Product speciﬁcation File under Discrete Semiconducto.
P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology.

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Datasheet Specifications

Part number: BST120
Manufacturer: NXP ↗
File Size: 57.68 KB
Datasheet: BST120_PhilipsSemiconductors.pdf
Description: P-channel transistor

Features

* Very low RDS(on)
* Direct interface to C-MOS
* High-speed switching
* No second breakdown QUICK REFERENCE DATA Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Total power dissipation up to Tamb = 25 °C Drain-source ON-resistance
* ID

Applications

* BST120 This data sheet contains target or goal speciﬁcations for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains ﬁnal product speciﬁcations. These products are not designed for use in life support appliances, devi

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BST120 P-channel transistor NXP

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