BST82 N-channel transistor

NXP

Description

DISCRETE SEMICONDUCTORS DATA SHEET BST82 N-channel enhancement mode vertical D-MOS transistor Product speciﬁcation File under Discrete Semiconductor.
N-channel enhancement mode vertical D-MOS transistor in SOT23 envelope and designed for use as Surface Mounted Device (SMD) in thin and thick-film cir.

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Datasheet Specifications

Part number: BST82
Manufacturer: NXP ↗
File Size: 74.39 KB
Datasheet: BST82_PhilipsSemiconductors.pdf
Description: N-channel transistor

Features

* Direct interface to C-MOS, TTL, etc.
* High-speed switching
* No second breakdown
* Low RDS(on) Transfer admittance ID = 175 mA; VDS = 5 V PINNING - SOT23 1 2 3 PIN CONFIGURATION = gate = source = drain  Yfs typ. QUICK REFERENCE DATA Drain-source voltage Drain-sou

Applications

* BST82 This data sheet contains target or goal speciﬁcations for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains ﬁnal product speciﬁcations. These products are not designed for use in life support appliances, devic

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BST82 N-channel transistor NXP

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