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BU2522DF Silicon Diffused Power Transistor

BU2522DF Description

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522DF GENERAL .
New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in hor.

BU2522DF Features

* improved RBSOA performance and is suitable for use in horizontal deflection circuits of pc monitors. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current pe

BU2522DF Applications

* These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to full

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Silicon Diffused Power Transistor NXP
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