BUJ100AT Silicon Diffused Power Transistor

NXP

Description

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100AT GENERAL .
High-voltage, high-speed planar-passivated npn power switching transistor in the SOT223 envelope intended for use in compact fluorescent lamps, low po.

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Datasheet Specifications

Part number: BUJ100AT
Manufacturer: NXP ↗
File Size: 69.43 KB
Datasheet: BUJ100AT_PhilipsSemiconductors.pdf
Description: Silicon Diffused Power Transistor

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