BUJ101AU Silicon Diffused Power Transistor

NXP

Description

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ101AU GENERAL .
High-voltage, high-speed planar-passivated npn power switching transistor in the I-PAK / SOT533 envelope intended for use in high frequency electronic.

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Datasheet Specifications

Part number: BUJ101AU
Manufacturer: NXP ↗
File Size: 62.01 KB
Datasheet: BUJ101AU_PhilipsSemiconductors.pdf
Description: Silicon Diffused Power Transistor

Applications

* converters and inverters, etc. QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFE tfi PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipati

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BUJ101AU Silicon Diffused Power Transistor NXP

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