BUJ103AU Silicon Diffused Power Transistor

NXP

Description

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AU GENERAL .
High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lightin.

📥 Download Datasheet

BUJ103AU Datasheet Preview — Preview of BUJ103AU PDF

Datasheet Specifications

Part number: BUJ103AU
Manufacturer: NXP ↗
File Size: 84.87 KB
Datasheet: BUJ103AU_PhilipsSemiconductors.pdf
Description: Silicon Diffused Power Transistor

Applications

* converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFEsat tf PARAMETER Collector-emitter voltage peak value Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collec

BUJ103AU Distributors

📁 Related Datasheet

BUJ100LR BUJ105AD BUJ302A BUJ302AX BUJ303A BUJ303CD

📌 All Tags

BUJ103AU Silicon Diffused Power Transistor NXP

NXP BUJ103AU-like datasheet