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BUK212-50Y Datasheet - NXP

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BUK212-50Y Power MOSFET

BUK212-50Y; BUK217-50Y Single channel high-side TOPFET™ Rev.01 * 17 March 2003 Product data 1.Product profile 1.1 .
Monolithic temperature and overload protected single high-side power switch based on TOPFET™ Trench technology in a 5-pin surface mount or leadform pl.

BUK212-50Y_PhilipsSemiconductors.pdf

Preview of BUK212-50Y PDF

Datasheet Details

Part number:

BUK212-50Y

Manufacturer:

NXP ↗

File Size:

413.01 KB

Description:

Power MOSFET

Features

* s s s s s s s Very low quiescent current Power TrenchMOS™ Overtemperature protection Over and undervoltage protection Reverse battery protection Low charge pump noise Loss of ground protection s s s s s s s CMOS logic capability Negative load clamping Overload protection ESD protection for all pins

Applications

* s 12 V and 24 V grounded loads s Inductive loads s High inrush current loads s Replacement for relays and fuses. 1.4 Quick reference data Table 1: Symbol RBLon IL IL(nom) IL(lim) VBG(oper) Quick reference data Parameter battery-load on-state resistance load current nominal load current (ISO) self-l

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