BUK455-200A
70.05kb
Powermos transistor. N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power
TAGS
📁 Related Datasheet
BUK455-200A - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Source Voltage-
: VDSS=200V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations.
BUK455-200B - PowerMOS transistor
(NXP)
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK455-200A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power t.
BUK455-200B - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Source Voltage-
: VDSS=200V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations.
BUK455-100A - PowerMOS transistor
(NXP)
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK455-100A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power t.
BUK455-100A - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Source Voltage-
: VDSS=100V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations.
BUK455-100B - PowerMOS transistor
(NXP)
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK455-100A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power t.
BUK455-100B - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Source Voltage-
: VDSS=100V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations.
BUK455-400A - Power MOS Transistor
(Philips)
..
..
..
..
..
.
BUK455-400B - Power MOS Transistor
(Philips)
..
..
..
..
..
.
BUK455-60A - PowerMOS transistor
(NXP)
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK455-60A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power tr.
Stock and price