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BUK455-60A PowerMOS transistor

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Description

Philips Semiconductors Product Specification PowerMOS transistor BUK455-60A/B GENERAL .
N-channel enhancement mode field-effect power transistor in a plastic envelope.

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Applications

* QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK455 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. -60A 60 41 125 175 0.038 MAX. -60B 60 38 125 175 0.045 UNIT V A W ˚C Ω PINNING - TO220AB PIN 1 2 3 tab gat

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