BUK472-60B
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Powermos transistor. N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched
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BUK472-60A - PowerMOS transistor
(NXP)
Philips Semiconductors
Product specification
PowerMOS transistor Isolated version of BUK452-60A/B
GENERAL DESCRIPTION
N-channel enhancement mode fie.
BUK472-100A - Power MOSFET
(NXP)
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Product specification
PowerMOS transistor Isolated version of BUK452-100A/B
GENERAL DESCRIPTION
N-channel enhancement mode fi.
BUK472-100B - PowerMOS transistor
(NXP)
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Product specification
PowerMOS transistor Isolated version of BUK452-100A/B
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N-channel enhancement mode fi.
BUK473-100A - PowerMOS transistor
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Product specification
PowerMOS transistor Isolated version of BUK453-100A/B
GENERAL DESCRIPTION
N-channel enhancement mode fi.
BUK473-100B - PowerMOS transistor
(NXP)
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Product specification
PowerMOS transistor Isolated version of BUK453-100A/B
GENERAL DESCRIPTION
N-channel enhancement mode fi.
BUK473-60A - PowerMOS transistor
(NXP)
Philips Semiconductors
Product specification
PowerMOS transistor Isolated version of BUK453-60A/B
GENERAL DESCRIPTION
N-channel enhancement mode fie.
BUK473-60B - PowerMOS transistor
(NXP)
Philips Semiconductors
Product specification
PowerMOS transistor Isolated version of BUK453-60A/B
GENERAL DESCRIPTION
N-channel enhancement mode fie.
BUK474-200A - PowerMOS transistor
(NXP)
Philips Semiconductors
Product specification
PowerMOS transistor Isolated version of BUK454-200A/B
GENERAL DESCRIPTION
N-channel enhancement mode fi.
BUK474-200B - PowerMOS transistor
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PowerMOS transistor Isolated version of BUK454-200A/B
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N-channel enhancement mode fi.
BUK474-60H - PowerMOS transistor
(NXP)
Philips Semiconductors
Product specification
PowerMOS transistor
BUK474-60H
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power tran.