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BUK625R2-30C N-channel TrenchMOS intermediate level FET

NXP

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Description

DPAK BUK625R2-30C N-channel TrenchMOS intermediate level FET Rev.1 * 12 July 2011 Product data sheet 1.Product profile 1.1 General des.
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.

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Datasheet Specifications

Part number: BUK625R2-30C
Manufacturer: NXP ↗
File Size: 175.88 KB
Datasheet: BUK625R2-30C-NXP.pdf
Description: N-channel TrenchMOS intermediate level FET

Features

* AEC Q101 compliant
* Suitable for standard and logic level gate drive sources

BUK625R2-30C Distributors

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BUK625R2-30C N-channel TrenchMOS intermediate level FET NXP

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