BUK7575-55
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Trenchmos transistor standard level fet. N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device f
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BUK7506-55A - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
BUK7506-55A
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤6.3mΩ ·Fast Switching Speed ·100% avalanche teste.