Datasheet4U Logo Datasheet4U.com

BUK7507-55B - N-Channel MOSFET

Description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Features

  • Low conduction losses due to low on-state resistance.
  • Q101 compliant.
  • Suitable for standard level gate drive sources.
  • Suitable for thermally demanding environments due to 175 °C rating 1.3.

📥 Download Datasheet

Datasheet preview – BUK7507-55B

Datasheet Details

Part number BUK7507-55B
Manufacturer NXP Semiconductors
File Size 204.14 KB
Description N-Channel MOSFET
Datasheet download datasheet BUK7507-55B Datasheet
Additional preview pages of the BUK7507-55B datasheet.

📁 Similar Datasheet

Other Datasheets by NXP Semiconductors

Full PDF Text Transcription

Click to expand full text
TO -22 0A B BUK7507-55B N-channel TrenchMOS standard level FET Rev. 2 — 26 July 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits  Low conduction losses due to low on-state resistance  Q101 compliant  Suitable for standard level gate drive sources  Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications  12 V and 24 V loads  Automotive systems  General purpose power switching  Motors, lamps and solenoids 1.4 Quick reference data Table 1.
Published: |