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BUK7509-75A - N-channel TrenchMOS standard level FET

General Description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Key Features

  • AEC Q101 compliant.
  • Low conduction losses due to low on-state resistance.
  • Suitable for standard level gate drive sources.
  • Suitable for thermally demanding environments due to 175 °C rating 1.3.

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Full PDF Text Transcription for BUK7509-75A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BUK7509-75A. For precise diagrams, and layout, please refer to the original PDF.

TO -22 0A B BUK7509-75A N-channel TrenchMOS standard level FET Rev. 03 — 21 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-c...

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ta sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ AEC Q101 compliant „ Low conduction losses due to low on-state resistance „ Suitable for standard level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ 12 V, 24 V and 42 V loads „ Automotive and general purpose power switching „ Motors, lamps and s

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