BUK7507-55B Datasheet | NXP Semiconductors

TO -22 0A B N-channel Trench MOS standard level FET Rev. 2 - 26 July 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits - Low conduction losses due to low on-state resistance - Q101 pliant - Suitable for standard level gate drive sources - Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications - 12 V and 24 V loads - Automotive systems - General purpose power switching - Motors, lamps and solenoids 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 11; see Figure 12 ID = 75 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped VGS = 10 V; ID = 25 A; VDS = 44 V; Tj = 25 °C; see Figure 13 [1] Min - Typ 5.8 Max 55 75 203 7.1 Unit V A W mΩ Static characteristics Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy gate-drain charge 351 m J Dynamic characteristics QGD 17 n C [1] Continuous current is limited by package. NXP...