BUK9510-30 TrenchMOS transistor Logic level FET

NXP

Description

Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL .
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology.

📥 Download Datasheet

BUK9510-30 Datasheet Preview — Preview of BUK9510-30 PDF

Datasheet Specifications

Part number: BUK9510-30
Manufacturer: NXP ↗
File Size: 49.60 KB
Datasheet: BUK9510-30_PhilipsSemiconductors.pdf
Description: TrenchMOS transistor Logic level FET

Applications

* BUK9510-30 QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V MAX. 30 75 142 175 10.5 UNIT V A W ˚C mΩ PINNING - TO220AB PIN 1 2 3 tab gate drain source drain

BUK9510-30 Distributors

📁 Related Datasheet

BUK9511-55A BUK9514-55A BUK9515-60E BUK9516-55A BUK9516-75B BUK9518-55A

📌 All Tags

BUK9510-30 TrenchMOS transistor Logic level FET NXP

NXP BUK9510-30-like datasheet