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BUK9510-30 - TrenchMOS transistor Logic level FET

Datasheet Summary

Description

N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology.

Features

  • very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and general purpose switching.

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Datasheet Details

Part number BUK9510-30
Manufacturer NXP
File Size 49.60 KB
Description TrenchMOS transistor Logic level FET
Datasheet download datasheet BUK9510-30 Datasheet
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Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and general purpose switching applications. BUK9510-30 QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V MAX. 30 75 142 175 10.
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