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BUK9618-30 TrenchMOS transistor Logic level FET

BUK9618-30 Description

Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL .
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology.

BUK9618-30 Applications

* BUK9618-30 QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V MAX. 30 55 103 175 18 UNIT V A W ˚C mΩ PINNING - SOT404 PIN 1 2 3 mb gate drain source drain DES

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TrenchMOS transistor Logic level FET NXP
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