Datasheet4U Logo Datasheet4U.com

BUK96180-100A Logic level FET

BUK96180-100A Description

Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL .
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 .

BUK96180-100A Applications

* BUK95180-100A BUK96180-100A QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V VGS = 10 V MAX. 100 11 54 175 180 173 UNIT V A W ˚C mΩ mΩ PINNING TO220AB & SOT4

📥 Download Datasheet

Preview of BUK96180-100A PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • BUK9618-55A - N-Channel MOSFET (NXP Semiconductors)
  • BUK9610-55A - N-Channel MOSFET (NXP Semiconductors)
  • BUK9611-55A - N-Channel MOSFET (NXP Semiconductors)
  • BUK9611-80E - N-channel TrenchMOS logic level FET (NXP Semiconductors)
  • BUK9614-55A - N-Channel MOSFET (NXP Semiconductors)
  • BUK9614-60E - N-Channel MOSFET (NXP Semiconductors)
  • BUK9615-100A - N-channel TrenchMOS standard level FET (nexperia)
  • BUK9615-100E - N-channel TrenchMOS standard level FET (nexperia)

📌 All Tags

Logic level FET NXP
NXP BUK96180-100A-like datasheet