BUK9E08-55B Datasheet, Fet, NXP

BUK9E08-55B Features

• Fet
• Low conduction losses due to low on-state resistance
• Q101 compliant
• Suitable for logic level gate drive sources
• Suitable for thermally demanding

PDF File Details

Part number:

BUK9E08-55B

Manufacturer:

NXP ↗

File Size:

373.75kb

Download:

📄 Datasheet

Description:

N-channel trenchmos logic level fet. Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product ha

BUK9E08-55B Application

• Applications 1.2 Features and benefits
• Low conduction losses due to low on-state resistance
• Q101 compliant
• Suitable

TAGS

BUK9E08-55B

NXP

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