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BUK9120-48TC PowerMOS transistor Voltage clamped logic level FET

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Description

Philips Semiconductors Product specification PowerMOS transistor Voltage clamped logic level FET with temperature sensing diodes GENERAL .
Protected N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting.

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Applications

* BUK9120-48TC QUICK REFERENCE DATA SYMBOL V(CL)DSR ID Ptot Tj RDS(ON) VF -SF PARAMETER Drain-source clamp voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V Forward voltage,temperature sense diodes Negative temperature coefficient, t

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