BUK9120-48TC Datasheet, Fet, NXP

BUK9120-48TC Features

• Fet very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV and active drain voltage clamping. Temperature sensitive diodes are incorporated for monitorin

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BUK9120-48TC

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NXP ↗

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📄 Datasheet

Description:

Powermos transistor voltage clamped logic level fet. Protected N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. U

BUK9120-48TC Application

• Applications BUK9120-48TC QUICK REFERENCE DATA SYMBOL V(CL)DSR ID Ptot Tj RDS(ON) VF -SF PARAMETER Drain-source clamp voltage Drain current (DC)

TAGS

BUK9120-48TC

NXP

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