BUK9006-55A Datasheet, Transistor, NXP Semiconductors

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BUK9006-55A

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📄 Datasheet

Description:

N-channel enhancement mode field-effect power transistor. N-channel enhancement mode ﬁeld-effect power transistor available as a bare die using Philips General Purpose Automotive (GPA) Trench

✔ BUK9006-55A Features

s 25 A testing of individual die s Inductive energy testing of individual die s Life-tested to Q101 at 175 °C s Automatic visual inspection. 1.3 Applications s Automotiv

✔ BUK9006-55A Application

s Automotive systems s Motors, lamps and solenoids s 12 V and 24 V loads s General purpose power switching.

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BUK9006-55A N-channel Enhancement mode field-effect power Transistor NXP Semiconductors