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BUK9006-55A Datasheet - NXP Semiconductors

N-channel Enhancement mode field-effect power Transistor

BUK9006-55A Features

* s 25 A testing of individual die s Inductive energy testing of individual die s Life-tested to Q101 at 175 °C s Automatic visual inspection. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V and 24 V loads s General purpose power switching. 1.4 Quick reference data s EDS(A

BUK9006-55A Datasheet (250.39 KB)

Preview of BUK9006-55A PDF

Datasheet Details

Part number:

BUK9006-55A

Manufacturer:

NXP ↗ Semiconductors

File Size:

250.39 KB

Description:

N-channel enhancement mode field-effect power transistor.

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BUK9006-55A N-channel Enhancement mode field-effect power Transistor NXP Semiconductors

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