BUK9006-55A N-channel Enhancement mode field-effect power Transistor

NXP Semiconductors

Description

www.DataSheet4U.com BUK9006-55A TrenchMOS™ logic level FET Rev.01 * 1 August 2003 Preliminary data 1.Product proﬁle 1.1 .
N-channel enhancement mode ﬁeld-effect power transistor available as a bare die using Philips General Purpose Automotive (GPA) TrenchMOS™ technology.

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Datasheet Specifications

Part number: BUK9006-55A
Manufacturer: NXP ↗ Semiconductors
File Size: 250.39 KB
Datasheet: BUK9006-55A_NXPSemiconductors.pdf
Description: N-channel Enhancement mode field-effect power Transistor

Applications

* s Automotive systems s Motors, lamps and solenoids s 12 V and 24 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 1.1 J s V(BR)DSS ≤ 55 V s Die size = 4.30 × 4.30 mm (typ) s RDSon(die) = 5 mΩ (typ) s VGS(th) = 1.5 V (typ) s Die thickness = 240 µm (typ). 2. Pinning i

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BUK9006-55A N-channel Enhancement mode field-effect power Transistor NXP Semiconductors

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