BUX86P Silicon Diffused Power Transistor

NXP

Description

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX86P BUX87P GENERAL .
High voltage, high speed glass passivated npn power transistors in a SOT82 envelope intended for use in converters, inverters, switching regulators, m.

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Datasheet Specifications

Part number: BUX86P
Manufacturer: NXP ↗
File Size: 50.85 KB
Datasheet: BUX86P_PhilipsSemiconductors.pdf
Description: Silicon Diffused Power Transistor

Applications

* QUICK REFERENCE DATA SYMBOL VCESM VCEO VCESAT IC ICM Ptot tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector-emitter saturation voltage Collector current (DC) Collector current peak value Total power dissipation Fall time CONDITIONS VBE = 0 V IC = 0.2

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BUX86P Silicon Diffused Power Transistor NXP

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