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BUX87-1100 - Silicon Diffused Power Transistor

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Description

High voltage, high speed,low capacitance npn power transistor in a SOT78 envelope intended for use in the dynamic focus circuit of televisions and monitors.

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Datasheet Details

Part number BUX87-1100
Manufacturer NXP
File Size 42.45 KB
Description Silicon Diffused Power Transistor
Datasheet download datasheet BUX87-1100 Datasheet
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Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX87-1100 GENERAL DESCRIPTION High voltage, high speed,low capacitance npn power transistor in a SOT78 envelope intended for use in the dynamic focus circuit of televisions and monitors. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation CONDITIONS VBE = 0 V TYP. MAX. 1100 700 0.
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